A theoretical study Of electrostatic properties Of 〈100〉 uniaxially strained silicon n-channel MOSFET

In this paper, an accurate and efficient one dimensional self-consistent numerical solution of <100> uniaxially strained n-MOS structure is presented based on finite element method. The solution is developed using FEMLAB considering wave function penetration effect into gate oxide. Significant change occurs in the eigen energies and the electron occupancies, intrinsic carrier concentration, inversion layer penetration and gate capacitance because of <100> uniaxial tensile stress. The consequences of these changes due to strain are explained.