Title :
Scaling of Strain-induced Mobility Enhancements in Advanced CMOS Technology
Author_Institution :
Semicond. R&D Center, IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
Abstract :
Mobility enhancement by strain is a critical element in today¿s CMOS technology, and enables continued performance scaling. By modulating fundamental material properties, various strained Si techniques boost device and circuit performance independent of geometric and power supply scaling. Challenges for strained Si in aggressively scaled technology demand new ideas and materials.
Keywords :
CMOS integrated circuits; elemental semiconductors; silicon; CMOS technology; Si; circuit performance; power supply scaling; strain-induced mobility enhancements; Boosting; CMOS technology; Capacitive sensors; Charge carrier density; Germanium silicon alloys; MOSFET circuits; Power supplies; Silicon germanium; Stress; Very large scale integration;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734484
