Title :
Influence of surface orientation on electrical characteristics in MOSFETs with slightly tilted off-axis channel
Author :
Momose, Hisayo S.
Author_Institution :
Center for Semicond. Res. & Dev., Toshiba Corp., Yokohama, Japan
Abstract :
Si surface properties and electrical characteristics in n- and p-MOSFETs with 2 - 6 degree tilted off-axis (110) channel were reported. The transconductance of p-MOSFET with off-axis channel was significantly degraded compared with that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved compared with that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. The gate leakage current and 1/f noise in (110) samples were also sensitive to off-axis angle.
Keywords :
1/f noise; MOSFET; elemental semiconductors; leakage currents; silicon; 1/f noise; Si; electrical characteristics; gate leakage current; n-MOSFET; p-MOSFET; slightly tilted off-axis channel; surface orientation; transconductance; Area measurement; Atomic force microscopy; Atomic measurements; Electric variables; Force measurement; Leakage current; MOSFET circuits; Rough surfaces; Semiconductor films; Surface roughness;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734489
