Title :
Impact factors on the performance of Schottky barrier MOSFETs with asymmetric barrier height at source/drain
Author :
Xiong-Xiong, Du ; Lei, Sun ; Xiao-yan, Liu ; Ru-Qi, Han
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
The performance of the n-channel Schottky barrier MOSFET with asymmetric barrier height at source/drain (A-SBFET) was numerically simulated. The impact factors on the performance are studied. The results suggest the on-state characteristics of the devices are mainly determined by the source-side barrier height (SBH). Increasing SBH or decreasing body thickness can optimize the sub-threshold slope, and decreasing SBH can enhance the on-state current.
Keywords :
MOSFET; Schottky barriers; SBFET; Schottky barrier MOSFET; asymmetric barrier height; n-channel MOSFET; source-side barrier height; source/drain; sub-threshold slope; CMOS technology; Electrons; Immune system; Intrusion detection; Leakage current; MOSFETs; Microelectronics; Schottky barriers; Silicon; Thermal resistance;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734496
