DocumentCode
2142364
Title
A Fermi Level Controlled High Voltage Transistor preventing subthreshold hump
Author
Park, Byoung-Chul ; Lee, Sung-Young ; Chang, Dong-Ryul ; Bang, Kee-In ; Kim, Sung-Jun ; Yi, Sang-Bae ; Ung, Eun-Seung J.
Author_Institution
Sch. of Semicond. Eng., Samsung Semicond. Inst. of Technol., Gyconggi-Do, South Korea
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
172
Lastpage
175
Abstract
In High Voltage Transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi Level Controlled HVT (FCHVT) to simply eliminate hump effects.
Keywords
Fermi level; power integrated circuits; power transistors; Fermi level controlled high voltage transistor; boron segregation; hump effect; low substrate doping concentration; parasitic charges; subthreshold region; Boron; Control systems; Electric variables; MOSFET circuits; Semiconductor device doping; Substrates; Temperature; Thermal stresses; Transistors; Voltage control; Boron Segregation; FCHVT; HV; High Voltage; Hump; STI;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734501
Filename
4734501
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