Title :
Thick field-oxide high-voltage PMOS in BCD technology for PDP scan driver IC
Author :
Li, Xiao-Ming ; Zhua, Yi-Qi
Author_Institution :
Inst. of Microelectron., Xidian Univ., Xian, China
Abstract :
High-voltage PMOS (HV-PMOS) with field-oxide as gate dielectrics for scan driver chip of plasma display panels (PDP) is disclosed in the paper, which is based on the epitaxial Bipolar-CMOS-DMOS (BCD) process. The key considerations during the design are proposed here, and abundance simulation and process regulation is done on the structure and parameter optimization, by the testing on the HV-PMOS parameter and chip parameter, the results is favorable for 170 V PDP scan driver chip, which contributes to the competitive cost efficiency.
Keywords :
CMOS integrated circuits; bipolar integrated circuits; driver circuits; integrated circuit design; integrated circuit testing; plasma displays; power integrated circuits; thick film circuits; BCD technology; PDP scan driver IC; epitaxial bipolar-CMOS-DMOS process; gate dielectrics; plasma display panels; scan driver chip; thick field-oxide high-voltage PMOS; voltage 170 V; Bipolar integrated circuits; Costs; Dielectrics; Driver circuits; Electric breakdown; Electric potential; Microelectronics; Paper technology; Plasma displays; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734502
