• DocumentCode
    2142396
  • Title

    Accurate Nonlinear Resistive FET Modeling for IMD Calculations

  • Author

    García, José A. ; Pedro, Jose C. ; Carvalho, Nuno B. ; Mediavilla, Angel ; Tazón, António

  • Author_Institution
    Depto. Ing. Comunicaciones, Universidad de Cantabria - Avda Los Castros s/n-39005 Santander - SPAIN.
  • Volume
    2
  • fYear
    1998
  • fDate
    Oct. 1998
  • Firstpage
    272
  • Lastpage
    276
  • Abstract
    This work discusses the nonlinear modeling procedures required for intermodulation distortion (IMD) calculations of MESFETs biased in the resistive (linear) region. An automatic full two-sided characterization of Ids(vgs, Vds) is compared against the previously published extraction of Ids(vds) in this problematic region. It is shown that this one-sided Taylor series extraction is insufficient for most applications of the FET in its triode zone, and thus an alternative method is proposed.
  • Keywords
    Intermodulation distortion; Intrusion detection; MESFETs; Microwave FETs; Microwave devices; Radio frequency; Switches; Taylor series; Telecommunications; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1998. 28th European
  • Conference_Location
    Amsterdam, Netherlands
  • Type

    conf

  • DOI
    10.1109/EUMA.1998.338163
  • Filename
    4139218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2142396