Title :
Double LDD concave (DLC) structure for sub-half micron MOSFET
Author :
Sunouchi, K. ; Takato, H. ; Nitayama, A. ; Hieda, K. ; Horiguchi, F. ; Masuoka, F.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5 V supply voltage. This structure has an impurity profile of n/sup +/-n/sup -/-p/sup -/-p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1) high drain sustaining voltage, (2) a reduced short-channel effect, (3) high current drivability, and (4) high reliability. The high current drivability provides high-speed switching.<>
Keywords :
insulated gate field effect transistors; semiconductor technology; 5 V; DLC MOSFET; characteristics; concave-structure MOSFET; double LDD concave structure; double lightly doped drain concave; drain sustaining voltage; high current drivability; high reliability; high-speed switching; impurity profile; n/sup +/-n/sup -/-p/sup -/-p structure; reduced short-channel effect; sub-half micron MOSFET; supply voltage; Etching; FETs; Fabrication; Impurities; MOSFET circuits; Silicon; Substrates; Threshold voltage; Ultra large scale integration; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32797
