New Lateral IGBT on partial membrane

Author

Lei, Lei ; Luo, Xiaorong ; Zhan, Zhan ; Zhang, Wei ; Zhang, Bo ; Li, Zhaoji

Author_Institution

State key Lab. of Electron. Thin Films & Integrated devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

184

Lastpage

187

Abstract

A new SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles on partial membrane (UVLD PM SOI LIGBT) is proposed in this paper. Its silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane, resulting in an enhanced breakdown voltage. Moreover, combining uniform and variation in lateral doping profiles achieves a low specific on-resistance. The breakdown voltage increases by one time and the specific on-resistance reduces by 31.5% in comparison with that of conventional SOI LIGBT structure. In contrast to CamSemi device, the maximal temperature decreases and specific on-resistance greatly reduces for UVLD PM SOI LIGBT with the increase of Lb.

Keywords

etching; insulated gate bipolar transistors; semiconductor doping; silicon-on-insulator; SOI; Si; drift region; lateral IGBT; lateral doping profile; partial membrane; silicon substrate; Biomembranes; Breakdown voltage; Doping profiles; Electric breakdown; Etching; Insulated gate bipolar transistors; Laboratories; Silicon on insulator technology; Substrates; Thin film devices; Breakdown voltage; Charge; High voltage; LIGBT; SOI; Specific on-resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734504

Filename

4734504