Title :
A New Nonlinear Noise Model for MESFET and HEMT Mixers Suitable for CAD Software
Author :
Danneville, F. ; Fan, S. ; Tamen, B. ; Dambrine, G. ; Cappy, A.
Author_Institution :
IEMN, UMR CNRS 9929, Cite Scientifique, Avenue Poincare- BP 69, 59652 Villeneuve d´´Ascq Cedex-France; HP EEsof Division, Santa Rosa. phone number: 707 577 3505, fax number: 707 577 3948, e-mail: danevile@sr.hp.com
Abstract :
In this paper, we propose a simple and accurate new model for determining the noise correlation matrix of FETs for mixer applications. Using this nonlinear noise model and by a judicious choice of the terminations value present at each frequency, it is shown that the noise figure of FET mixers can be greatly improved HP EEsof and IEMN are investigating incorporating the model into HP EEsof´s products so as to widely increase its availability.
Keywords :
FETs; Frequency; HEMTs; MESFETs; Mixers; Noise figure; Signal analysis; Temperature; Tin; Voltage;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338164
