Title :
Analysis of breakdown characteristics of 40nm PD SOI NMOS device considering STI-induced mechanical stress effect
Author :
Kuo, J.B. ; Su, V.C. ; Lin, I.S. ; Chen, D. ; Lin, G.S. ; Yeh, C.S. ; Tsai, C.T. ; Ma, M.
Author_Institution :
Dept of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper reports an analysis of the STI-induced mechanical stress-related breakdown characteristics of the 40 nm PD SOI NMOS device with a closed-form formula. As verified by the experimentally measured data, the 2D simulation results and the closed-form formula, the breakdown voltage becomes higher for the device with a smaller S/D length of 0.17 ¿m due to the weaker function of the parasitic bipolar device, offset by the stronger impact ionization in the post-pinchoff region. The breakdown voltage of this PD SOI NMOS device is affected strongly by the STI-induced mechanical stress effect when the S/D length is smaller than 0.2 ¿m.
Keywords :
CMOS integrated circuits; MOSFET; electric breakdown; silicon-on-insulator; PD SOI NMOS device; STI-induced mechanical stress effect; breakdown characteristic analysis; breakdown voltage; closed-form formula; post-pinchoff region; silicon-on-insulator; size 0.17 mum; size 40 nm; Current measurement; Electric breakdown; Impact ionization; Length measurement; MOS devices; Nanoscale devices; Photonic band gap; Stress; Thin film devices; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734515
