Title :
Low-frequency current fluctuations in post-hard breakdown thin silicon oxide films
Author :
Omura, Yasttrisa
Author_Institution :
Grad. Sch. of Sci. & Eng, Kansai Univ., Suita, Japan
Abstract :
This paper focuses on the current fluctuation of post-hard breakdown thin silicon oxide films with thickness ranging from 3 nm to 5 nm. We characterize the post-degraded structure of silicon oxide films by analyzing current fluctuation spectra after hard breakdown.
Keywords :
current fluctuations; electric breakdown; silicon compounds; thin films; low-frequency current fluctuations; post-degraded structure; post-hard breakdown; size 3 nm to 5 nm; thin silicon oxide films; Algorithm design and analysis; Electric breakdown; Electrodes; Electronic switching systems; Fluctuations; Semiconductor films; Silicon; Tellurium; Voltage; Wet etching;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734517
