Title :
Defect current and defect band conduction of ultrathin oxides after degradation and breakdown
Author :
Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Defect current of ultrathin oxides after degradation and breakdown was investigated by defect band structure model. The degradation and breakdown of SiO2 can be modeled as a one dimensional linear chain of N identical defects with a effective Bohr radius ad separated by a distance R between electrodes. The degradation occurs when the defect distance ratio (¿ = R/ad) local reaches a transition value of about 8 and defect potential barrier height (¿DB) approaches 1.1 eV. Stress-induced leakage current (SILC) occurs, if ¿ ¿ 8 or q ¿DB =1.1 eV; soft breakdown (SBD) occurs, if 0.27 eV= ¿q ¿DB < 1.1 eV or 3.8 ¿ ¿ < 8; and hard breakdown (HBD) occurs when q ¿DB =0 or ¿ = 3.4. The huge defect current differences between SILC, SBD, and HBD are solely due to different defect distance.
Keywords :
MIS devices; leakage currents; semiconductor device breakdown; silicon compounds; SiO2; defect band conduction; defect current; defect potential barrier height; effective Bohr radius; semiconductor device breakdown; semiconductor device degradation; stress-induced leakage current; ultrathin oxides; Boundary conditions; Degradation; Electric breakdown; Electrodes; Electrons; Energy states; Leakage current; Microelectronics; Solid modeling; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734518
