Defect current and defect band conduction of ultrathin oxides after degradation and breakdown

Author

Xu, Mingzhen ; Tan, Changhua

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

247

Lastpage

249

Abstract

Defect current of ultrathin oxides after degradation and breakdown was investigated by defect band structure model. The degradation and breakdown of SiO₂ can be modeled as a one dimensional linear chain of N identical defects with a effective Bohr radius a_d separated by a distance R between electrodes. The degradation occurs when the defect distance ratio (Â¿ = R/a_d) local reaches a transition value of about 8 and defect potential barrier height (Â¿_DB) approaches 1.1 eV. Stress-induced leakage current (SILC) occurs, if Â¿ Â¿ 8 or q Â¿_DB =1.1 eV; soft breakdown (SBD) occurs, if 0.27 eV= Â¿q Â¿_DB < 1.1 eV or 3.8 Â¿ Â¿ < 8; and hard breakdown (HBD) occurs when q Â¿_DB =0 or Â¿ = 3.4. The huge defect current differences between SILC, SBD, and HBD are solely due to different defect distance.

Keywords

MIS devices; leakage currents; semiconductor device breakdown; silicon compounds; SiO₂; defect band conduction; defect current; defect potential barrier height; effective Bohr radius; semiconductor device breakdown; semiconductor device degradation; stress-induced leakage current; ultrathin oxides; Boundary conditions; Degradation; Electric breakdown; Electrodes; Electrons; Energy states; Leakage current; Microelectronics; Solid modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734518

Filename

4734518