• DocumentCode
    2142918
  • Title

    Fast method to identify the root cause for ILD Vbd fail

  • Author

    Gan, Z.H. ; Wu, Y.J. ; Zheng, K. ; Guo, R. ; Liao, C.C.

  • Author_Institution
    Logic Technol. Dev., Semicond. Manuf. Int. Corp., Shanghai, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    254
  • Lastpage
    257
  • Abstract
    At the process development stage, the non-uniformity of the BEOL dielectric breakdown voltage (Vbd) in a wafer mapping is always observed. Such non-uniformity may be induced either by ¿interface-mode¿ or by ¿CD-mode¿. This paper provides a fast method to identify the root cause for ILD Vbd fail through analyzing the current-voltage (I-V) curves from the V-ramp test.
  • Keywords
    electric breakdown; semiconductor device metallisation; BEOL dielectric breakdown voltage; ILD fail; fast method; wafer mapping; Cathodes; Copper; Dielectric breakdown; Electron emission; Gallium nitride; Linearity; Plasma accelerators; Plasma chemistry; Silicon compounds; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734520
  • Filename
    4734520
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2142918