An analytical model for carrier recombination and generation lifetimes measurement in SOI MOSFET’s

Author

Zhang, Gang ; Jong Yoo, Won

Author_Institution

SKKU Adv. Inst. of Nano-Technol., Sungkyunkwan Univ., Suwon, South Korea

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

297

Lastpage

300

Abstract

In this paper, an analytical model is proposed to study the carrier recombination-generation (R-G) processes in silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET´s). The correlations of the carrier lifetimes and the external perturbation rates have been investigated to examine the applicability and accuracy of techniques for carrier lifetimes measurement in device characterization and modeling. The credibility of the proposed model is supported by the consistent experimental and simulation results.

Keywords

MOSFET; carrier lifetime; perturbation techniques; semiconductor device models; silicon-on-insulator; SOI MOSFET; analytical model; carrier recombination-generation; external perturbation rates; lifetimes measurement; metal-oxide-semiconductor field-effect transistors; semiconductor device models; silicon-on-insulator; Analytical models; Charge carrier lifetime; Electronic mail; Electrostatics; FETs; Intrusion detection; Lifetime estimation; Silicon on insulator technology; Steady-state; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734522

Filename

4734522