Off-state leakage current modeling in low-power/high-performance partially-depleted (PD) floating-body (FB) SOI MOSFETs

Off-state leakage current in a 65 nm partially depleted (PD) floating-body (FB) SOI technology is modeled and analyzed with emphasis on its drain-voltage dependence. Modeling accuracy of the off-state leakage current is highly dependent on modeling of parasitic currents, although their direct contribution to the leakage may be negligible in lower-power/high-performance technologies. The underlying physical mechanism, i.e., the FB effect, is also shown to be responsible for observed varying drain-induced-barrier-lowering (DIBL) or highly non-linear dependence of the threshold voltage on drain voltage. While characterization of parasitic currents may present a challenge because of unconventional geometry dependences, the off-state leakage current and its fitting accuracy may be used as an indirect, effective figure of merit.