An efficient compact model for LDMOS with self-heating effects

A charge based compact model with self-heating effects has been developed for LDMOS transistors. Both the channel and drift regions in LDMOS are modeled without adding an internal drain node. An efficient scheme for including self-heating effects is implemented in the model, which requires no thermal network. A comparison with measured data from an LDMOS shows that the model has excellent accuracy in calculated I-V characteristics. Moreover, all model expressions and their derivatives are continuous, thus facilitating the convergence in circuit simulation.