Title :
Modeling of the effective mobility for polysilicon thin film transistor
Author :
Yan, Bing-Hui ; Li, Bin ; Yao, Ruo-He ; Zheng, Xue-Ren
Author_Institution :
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
In this paper, a model of the effective mobility for the on-current of p-Si TFT is proposed, taking into account the gain size, the drain bias, the imperfection crystal scattering mechanism, and the surface-roughness scattering mechanism. It is found that at the linearity region, the effective mobility decreases with the drain bias increasing and increases with the grain size increasing. The simulation results are in a good agreement with the experimental data.
Keywords :
carrier mobility; silicon; surface roughness; thin film transistors; Si; TFT; drain bias; effective mobility; gain size; imperfection crystal scattering mechanism; polysilicon thin film transistor; surface-roughness scattering mechanism; Active matrix liquid crystal displays; Current density; Grain boundaries; Grain size; Lattices; Linearity; Microelectronics; Scattering parameters; Thin film transistors; Threshold voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734528
