A complete surface potential-based current-voltage and capacitance-voltage core model for undoped surrounding-gate MOSFETs

Author

He, Jin ; Yan Song ; Liu, Feng ; Liu, Feilong ; Zhang, Lining ; Zhang, Jian ; Zhang, Xing

Author_Institution

TSRC, Peking Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

268

Lastpage

271

Abstract

A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and predicted SRG-MOSFETÂ¿s characteristics by the 3-D numerical simulation.

Keywords

MOSFET; capacitance; semiconductor device models; surface potential; 3-D numerical simulation; cylindrical undoped surrounding-gate MOSFETs; noncharge-sheet approximation; surface potential-based capacitance-voltage core model; surface potential-based current-voltage model; Capacitance-voltage characteristics; Closed-form solution; Helium; Integral equations; MOSFETs; Numerical simulation; Physics; Poisson equations; Predictive models; Silicon; device physics; non-charge-sheet approximation; non-classical MOSFET; surface potential model; surrounding-gate MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734530

Filename

4734530