Title :
Influence of Layout and Packaging on the Temperature of GaAs Power PHEMTs
Author :
Marsetz, W. ; Dammann, M. ; Kawashima, H. ; Rüdiger, J. ; Matthes, B. ; Hülsmann, A. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, D-79108 Freiburg, Germany, Phone: +49-761-5159-641, Fax: +49-761-5159-565, E-mail: marsetz@iaf.fhg.de
Abstract :
The influence of device layout and packaging on transistor temperature was investigated. The operating temperatures of GaAs power PHEMTs were measured with integrated temperature sensors from 20 - 200°C with an accuracy of a few degrees. The measured data are in very good agreement with our three-dimensional simulation results. Thus, reliable prediction on the effect of packaging and layout details on device temperature is possible.
Keywords :
Gallium arsenide; PHEMTs; Packaging; Schottky diodes; Semiconductor device measurement; Temperature dependence; Temperature measurement; Temperature sensors; Thermal conductivity; Thermal resistance;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338193
