DocumentCode
2143422
Title
Analysis of metal routing technique in a novel dual direction multi-finger SCR ESD protection device
Author
Du Xiaoyang ; Dong Shurong Yan ; Liou, Juin J.
Author_Institution
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
337
Lastpage
340
Abstract
A novel dual direction SCR (DDSCR) ESD protection device is implemented in HJTK 0.18-¿m CMOS process without deep N-well or T-well masks. Both parallel and anti-parallel metal routing method of multi-fingered DDSCR is investigated in this paper. It shows that metal routing in layout design plays an important role in the performance of multi-fingered DDSCR due to its symmetrical TLP I-V plot characteristics.
Keywords
CMOS integrated circuits; electrostatic discharge; network routing; thyristors; CMOS process; N-well mask; T-well mask; antiparallel metal routing method; dual direction multifinger SCR ESD protection device; metal routing technique analysis; size 0.18 mum; Avalanche breakdown; Breakdown voltage; CMOS process; Circuits; Electrostatic discharge; Electrostatic interference; Protection; Radio frequency; Routing; Thyristors; DDSCR; ESD; TLP; multi-fingered; routing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734540
Filename
4734540
Link To Document