DocumentCode
2143470
Title
LSI immunity test method by direct GND pin injection
Author
Tsukagoshi, Tsuneo ; Kuriyama, Toshihide ; Wabuka, Hiroshi ; Watanabe, Takeshi
Author_Institution
Jisso Res. Labs., NEC Corp., Kawasaki, Japan
Volume
1
fYear
2003
fDate
18-22 Aug. 2003
Firstpage
248
Abstract
This paper proposed a method to test the immunity of LSIs where RF noise is injected into the GND pin of an LSI. We concluded that the GND pin injection test we propose is more suitable for evaluating actual LSI immunity against RF noise than the VDD pin injection test based on conventional Direct RF Power Injection (DPI).
Keywords
immunity testing; integrated circuit testing; large scale integration; radiofrequency interference; GND pin injection test; LSI immunity; RF noise; VDD pin injection test; direct GND pin injection; direct RF power injection; immunity test method; Cellular phones; Electromagnetic compatibility; Electrostatic discharge; Immune system; Immunity testing; Large scale integration; National electric code; Pins; Radio frequency; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 2003 IEEE International Symposium on
Print_ISBN
0-7803-7835-0
Type
conf
DOI
10.1109/ISEMC.2003.1236600
Filename
1236600
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