First-principles study of Schottky barrier formation of a semiconducting carbon nanotube-metal contact

Author

He, Yu ; Zhang, Ming ; Zhang, Jinyu ; Wang, Van ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

381

Lastpage

384

Abstract

Recent experiment shows that scandium (Sc) can make a good performance contact with carbon nanotube (CNT) to fabricate n-type field effect transistor (n-FET). In this paper, we study the Schottky barrier (SB) of scandium (Sc) and palladium (Pd) with a (8,0) single-wall CNT (SWCNT) using first-principles calculation. We find that the p-type SB height (SBH) of the Pd-CNT contact is about 0.34 eV which is in good agreement with experimental value. For the Sc-CNT contact, an n-type contact is formed and the SBH is about 0.15 eV. Our calculation demonstrates that, by contacting CNT with Pd and Sc, p-FET and n-FET can be fabricated, respectively.

Keywords

Schottky barriers; ab initio calculations; carbon nanotubes; field effect transistors; palladium; scandium; semiconductor nanotubes; semiconductor-metal boundaries; C-Pd; C-Sc; Schottky barrier formation; dipole effect; first-principles calculation; n-type contact; n-type field effect transistor; p-type Schottky barrier height; semiconducting carbon nanotube-metal contact; Carbon nanotubes; Electrodes; Electrons; Energy states; FETs; Helium; Microelectronics; Palladium; Schottky barriers; Semiconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734544

Filename

4734544