DocumentCode
2143598
Title
Modelig and Simulation of Hybrid RF Circuits Using a Versatile Compact Bondwire Model
Author
Harm, A.O. ; Mouthaan, K. ; Aziz, E. ; Versleijen, M.
Author_Institution
Discrete Semiconductors Nijmegen, Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands. Lex.Harm@nym.sc.philips.com
Volume
2
fYear
1998
fDate
Oct. 1998
Firstpage
529
Lastpage
534
Abstract
The application of a versatile bondwire model for simulating the RF behavior of hybrid circuits is described. The bondwire model calculates the effective inductance and skin effect losses of sets of mutually coupled bondwires. Within the frequency range of 0.2 - 3 GHz the usage and accuracy of the model is demonstrated by comparing the measured and simulated small signal behavior of one stage bipolar transistor amplifier circuits. Typically gains can be simulated within 0.5 db accuracy, resonance frequencies of matching networks that are tuned with bondwire inductances within 2 %.
Keywords
Bipolar transistors; Bonding; Circuit simulation; Coupling circuits; Frequency measurement; Inductance; Mutual coupling; Radio frequency; Resonance; Skin effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338208
Filename
4139263
Link To Document