• DocumentCode
    2143598
  • Title

    Modelig and Simulation of Hybrid RF Circuits Using a Versatile Compact Bondwire Model

  • Author

    Harm, A.O. ; Mouthaan, K. ; Aziz, E. ; Versleijen, M.

  • Author_Institution
    Discrete Semiconductors Nijmegen, Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands. Lex.Harm@nym.sc.philips.com
  • Volume
    2
  • fYear
    1998
  • fDate
    Oct. 1998
  • Firstpage
    529
  • Lastpage
    534
  • Abstract
    The application of a versatile bondwire model for simulating the RF behavior of hybrid circuits is described. The bondwire model calculates the effective inductance and skin effect losses of sets of mutually coupled bondwires. Within the frequency range of 0.2 - 3 GHz the usage and accuracy of the model is demonstrated by comparing the measured and simulated small signal behavior of one stage bipolar transistor amplifier circuits. Typically gains can be simulated within 0.5 db accuracy, resonance frequencies of matching networks that are tuned with bondwire inductances within 2 %.
  • Keywords
    Bipolar transistors; Bonding; Circuit simulation; Coupling circuits; Frequency measurement; Inductance; Mutual coupling; Radio frequency; Resonance; Skin effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1998. 28th European
  • Conference_Location
    Amsterdam, Netherlands
  • Type

    conf

  • DOI
    10.1109/EUMA.1998.338208
  • Filename
    4139263