Nanoelectronic device simulation using extended Hückel theory (EHT) and NEGF

Author

Yu, Zhiping ; Guan, Ximeng ; Zhang, Ming ; Ran, Qiushi

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

353

Lastpage

356

Abstract

Nanoelectronic devices can be, in one way, characterized by the large surface/volume ratio in addition to the central role of quantum effects. This paper describes a computationally efficient way of obtaining the band-structure of the intrinsic device including the interface with metal contacts using the extended Huckel theory (EHT). Carrier quantum transport is then computed by NEGF (non-equilibrium GreenÂ¿s function). GNRFETs (graphene-nanoribbon FET) are simulated using this approach as an application example.

Keywords

EHT calculations; Green´s function methods; band structure; field effect transistors; nanoelectronics; semiconductor device models; transport processes; NEGF; carrier quantum transport; extended Huckel theory; graphene-nanoribbon FET; intrinsic device band structure; metal contact interface; nanoelectronic device simulation; nonequilibrium Green function; Computational modeling; Crystalline materials; Crystals; Microelectronics; Nanoscale devices; Network address translation; Orbital calculations; Quantum computing; Quantum mechanics; Radio access networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734552

Filename

4734552