Simulation of magnetotransport in nanoscale devices

Author

Hong, Sung-Min ; Jungemann, Christoph

Author_Institution

EIT4, Bundeswehr Univ., Neubiberg, Germany

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

377

Lastpage

380

Abstract

The Boltzmann equation is solved by a spherical harmonics expansion including a magnetic force perpendicular to the two-dimensional simulation plane in real space. The new approach is used to verify a methodology for extracting the electron minority mobility of SiGe HBTs. Magnetotransport in a silicon n⁺nn⁺ device is simulated and a strong impact of the maximum number of spherical harmonics on the simulation result is found.

Keywords

Boltzmann equation; Ge-Si alloys; electron mobility; galvanomagnetic effects; heterojunction bipolar transistors; nanoelectronics; semiconductor device models; Boltzmann equation; HBT; SiGe; electron minority mobility; heterojunction bipolar transistors; magnetotransport simulation; nanoscale devices; silicon n⁺nn⁺ device simulation; spherical harmonics expansion; two-dimensional simulation plane; Boltzmann equation; Distribution functions; Electron mobility; Germanium silicon alloys; Light scattering; Magnetic devices; Magnetic fields; Magnetic forces; Nanoscale devices; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734558

Filename

4734558