Title :
Simulation of magnetotransport in nanoscale devices
Author :
Hong, Sung-Min ; Jungemann, Christoph
Author_Institution :
EIT4, Bundeswehr Univ., Neubiberg, Germany
Abstract :
The Boltzmann equation is solved by a spherical harmonics expansion including a magnetic force perpendicular to the two-dimensional simulation plane in real space. The new approach is used to verify a methodology for extracting the electron minority mobility of SiGe HBTs. Magnetotransport in a silicon n+nn+ device is simulated and a strong impact of the maximum number of spherical harmonics on the simulation result is found.
Keywords :
Boltzmann equation; Ge-Si alloys; electron mobility; galvanomagnetic effects; heterojunction bipolar transistors; nanoelectronics; semiconductor device models; Boltzmann equation; HBT; SiGe; electron minority mobility; heterojunction bipolar transistors; magnetotransport simulation; nanoscale devices; silicon n+nn+ device simulation; spherical harmonics expansion; two-dimensional simulation plane; Boltzmann equation; Distribution functions; Electron mobility; Germanium silicon alloys; Light scattering; Magnetic devices; Magnetic fields; Magnetic forces; Nanoscale devices; Silicon germanium;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734558
