DocumentCode
2143901
Title
A simple procedure to determine source/drain series resistance and effective channel length for advanced MOSFETs
Author
Chang, Yang-Hua ; Cheng, Ying-Chieh ; Ho, Ching-Sung
Author_Institution
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Taiwan
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
452
Lastpage
455
Abstract
A simple procedure to determine source/drain series resistance and effective channel length has been developed for advanced MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 ¿m. The parameters extracted with this procedure have been validated by comparing calculated and measured I-V characteristics.
Keywords
MOSFET; electrical resistivity; masks; I-V characteristics; MOSFETs; effective channel length; mask; size 0.185 mum; size 0.2 mum; size 0.23 mum; source-drain series resistance; Electrical resistance measurement; Implants; Length measurement; Lithography; MOSFETs; Maintenance engineering; Monitoring; Power engineering and energy; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734561
Filename
4734561
Link To Document