DocumentCode :
2144007
Title :
Directed Genetic algorithms for OTFT model parameter extraction
Author :
Garcia-Moreno, E. ; Iniguez, B. ; Picos, R.
Author_Institution :
GTE, Univ. of Balearic Islands, Palma, Spain
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
424
Lastpage :
427
Abstract :
An improvement on the parameter extraction technique for compact device models based on Genetic algorithms is presented. The use of fuzzy logic based rules to direct the evolution of the genetic algorithm enhances the convergence and the physical meaning of the parameters is preserved. Another advantage of this method is that the fuzzy rules can be applied just to a reduced set of model parameters. The parameter extraction procedure is applied to find the parameters in an OTFT model from a set of experimental data. Agreement between measured and modeled DC I-V characteristics is excellent. Moreover, the parameter values obtained with this procedure agree remarkably with the ones obtained by a direct extraction method.
Keywords :
fuzzy logic; genetic algorithms; organic field effect transistors; thin film transistors; DC I-V characteristics; OTFT model parameter extraction; fuzzy logic based rules; genetic algorithm; organic thin film transistor; Convergence; FETs; Fuzzy logic; Genetic algorithms; Optimization methods; Organic thin film transistors; Parameter extraction; Thin film transistors; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734565
Filename :
4734565
Link To Document :
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