Analysis of high frequency effects in the intrinsic part of nano-metre scale MOS devices in millimeter wave band

Author

Hasani, J. Yavand ; Kamarei, M. ; Ndagijimana, F.

Author_Institution

Univ. of Tehran, Tehran, Iran

fYear

2009

fDate

29-31 Dec. 2009

Firstpage

15

Lastpage

20

Abstract

Distributed effects may appear in active devices in mm-wave CMOS integrated design. In this paper we have analyzed the distributed effects in the intrinsic MOS transistor. Non-quasi static effect has been reviewed and its importance in mm-wave band has been demonstrated by simulations in the foundry design kit for STMicroelectronics 90nm CMOS technology. The distributed effect of MOS transistor has been analyzed and modeled and closed form equations have been derived to calculate Y parameters of the transistor, considering the distributed nature of the transistor. Analysis results are in excellent agreement with the simulation results. The results show that by using the strategy of double connection to the gate finger the distributed effects can be avoided in millimeter wave band.

Keywords

CMOS integrated circuits; MOSFET; field effect MIMIC; high-frequency effects; integrated circuit design; CMOS integrated design; MIMIC; closed form equations; foundry design kit; gate finger; high frequency effects; intrinsic MOS transistor; nanometre scale MOS devices; non-quasi static effect; size 90 nm; CMOS technology; Foundries; Frequency; MOS devices; MOSFETs; Millimeter wave devices; Millimeter wave technology; Millimeter wave transistors; Nanoscale devices; Semiconductor device modeling; CMOS transistor; Gate finger; Millimetre wave band; Non-quasi static; distributed effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter-Wave and Terahertz Technologies (MMWaTT), 2009 First Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4244-6807-2

Type

conf

DOI

10.1109/MMWATT.2009.5450462

Filename

5450462