DocumentCode :
2144191
Title :
Analysis and modeling of a Low Voltage Triggered SCR ESD protection clamp with the very fast Transmission Line Pulse measurement
Author :
Park, Jae-Young ; Song, Jong-Kyu ; Jang, Chang-Soo ; Son, Young-Sang ; Kim, Dae-Woo
Author_Institution :
Tech. Eng. Center, Dongbu HiTek Ltd., Co., Bucheon, South Korea
fYear :
2010
fDate :
22-24 March 2010
Firstpage :
206
Lastpage :
210
Abstract :
The analysis and the modeling of a Low Voltage Triggered SCR (Silicon Controlled Rectifier) under vf-TLP (very-fast Transmission Line Pulse) measurements are reported. The results measured by vf-TLP system showed that the triggering voltage (Vt1) decreased and the second breakdown current (It2) increased in the comparison with the results measured by a standard 100ns TLP (Transmission Line Pulse) system. A compact model based on the vf-TLP measured characteristics is presented. The measurement result and the simulation data of the behavior approached model indicate a good correlation.
Keywords :
electric breakdown; electrostatic discharge; pulse measurement; thyristors; transmission line theory; breakdown current; low voltage triggered SCR ESD protection clamp; silicon controlled rectifier; triggering voltage; very-fast transmission line pulse measurements; vf-TLP; Breakdown voltage; Clamps; Current measurement; Electrostatic discharge; Low voltage; Measurement standards; Protection; Pulse measurements; Thyristors; Transmission line measurements; ElectroStatic Discharge (ESD); Silicon Controlled Rectifier; Very Fast Transmission Line Pulse Measurement; compact model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2010 11th International Symposium on
Conference_Location :
San Jose, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4244-6454-8
Type :
conf
DOI :
10.1109/ISQED.2010.5450464
Filename :
5450464
Link To Document :
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