Analysis and modeling of a Low Voltage Triggered SCR ESD protection clamp with the very fast Transmission Line Pulse measurement

Author

Park, Jae-Young ; Song, Jong-Kyu ; Jang, Chang-Soo ; Son, Young-Sang ; Kim, Dae-Woo

Author_Institution

Tech. Eng. Center, Dongbu HiTek Ltd., Co., Bucheon, South Korea

fYear

2010

fDate

22-24 March 2010

Firstpage

206

Lastpage

210

Abstract

The analysis and the modeling of a Low Voltage Triggered SCR (Silicon Controlled Rectifier) under vf-TLP (very-fast Transmission Line Pulse) measurements are reported. The results measured by vf-TLP system showed that the triggering voltage (Vt1) decreased and the second breakdown current (It2) increased in the comparison with the results measured by a standard 100ns TLP (Transmission Line Pulse) system. A compact model based on the vf-TLP measured characteristics is presented. The measurement result and the simulation data of the behavior approached model indicate a good correlation.

Keywords

electric breakdown; electrostatic discharge; pulse measurement; thyristors; transmission line theory; breakdown current; low voltage triggered SCR ESD protection clamp; silicon controlled rectifier; triggering voltage; very-fast transmission line pulse measurements; vf-TLP; Breakdown voltage; Clamps; Current measurement; Electrostatic discharge; Low voltage; Measurement standards; Protection; Pulse measurements; Thyristors; Transmission line measurements; ElectroStatic Discharge (ESD); Silicon Controlled Rectifier; Very Fast Transmission Line Pulse Measurement; compact model;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design (ISQED), 2010 11th International Symposium on

Conference_Location

San Jose, CA

ISSN

1948-3287

Print_ISBN

978-1-4244-6454-8

Type

conf

DOI

10.1109/ISQED.2010.5450464

Filename

5450464