Title :
Phase change memory cell design by thermal analysis with finite element simulation
Author :
Gong, Yue-Feng ; Ling, Yun ; Song, Zhi-Tang ; Feng, Song-Lin
Author_Institution :
Grad. Sch., Chinese Acad. of Sci., Beijing, China
Abstract :
A comprehensive thermal analysis of the Phase change random memory (PCRAM) by 3D finite element modeling is proposed. The impact of thermal on device cell design and optimization is investigated. Such an analysis can be used as a guideline for the optimum design. This manuscript provides an insight into the thermal issues and the phenomena in the PCRAM. Refined structure, ring in GST structure (RIG), is proposed for high density and low power consumption.
Keywords :
finite element analysis; logic design; phase change memories; thermal analysis; 3D finite element modeling; phase change memory cell design; phase change random memory; ring-in-GST structure; thermal analysis; Amorphous materials; Analytical models; Crystallization; Dielectric thin films; Electrodes; Finite element methods; Phase change materials; Phase change memory; Phase change random access memory; Tin;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734575
