• DocumentCode
    2144342
  • Title

    A new MOS varactor BSIM4 model with temperature effect

  • Author

    Chen, Zhanfei ; Wong, Waisum ; Cheng, Jenhao ; He, Danmy

  • Author_Institution
    Semicond. Manuf. Int. Corp., Shanghai, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    527
  • Lastpage
    529
  • Abstract
    In this paper we present a new BSIM4-based RF MOS varactor model. The new model accurately models the varactor behavioral for the submicron MOS when the gate leakage effect needs to included. The model also accounts for the temperature effect when parasitic resistance and capacitance are considered in the Q-factor extraction.
  • Keywords
    MOSFET; varactors; MOSFET; RF MOS varactor; CMOS technology; Equivalent circuits; Gate leakage; Integrated circuit modeling; Probes; Radio frequency; Resistors; Semiconductor device modeling; Temperature; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734580
  • Filename
    4734580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2144342