DocumentCode
2144438
Title
Thermal noise performance in recent CMOS technologies
Author
Chen, Chih-Hung ; Hung, Bigchoug ; Huang, Sheng-Yi ; Jan, Jin-Shyong ; Liang, Victor ; Yeh, Chune-Sin
Author_Institution
Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
476
Lastpage
479
Abstract
This paper reviews the measurement and modeling issues of the channel thermal noise in MOSFETs as a result of the aggressive reduction of the channel length into the sub-100 nm regimes. It also shows the noise performance of devices in 65 nm CMOS technology.
Keywords
CMOS integrated circuits; MOSFET; thermal noise; CMOS technology; MOSFET; aggressive reduction; channel length; channel thermal noise; size 65 nm; Analog integrated circuits; Application specific integrated circuits; CMOS technology; Equations; High speed integrated circuits; Integrated circuit noise; MOSFETs; Microelectronics; Noise measurement; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734584
Filename
4734584
Link To Document