DocumentCode :
2144438
Title :
Thermal noise performance in recent CMOS technologies
Author :
Chen, Chih-Hung ; Hung, Bigchoug ; Huang, Sheng-Yi ; Jan, Jin-Shyong ; Liang, Victor ; Yeh, Chune-Sin
Author_Institution :
Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
476
Lastpage :
479
Abstract :
This paper reviews the measurement and modeling issues of the channel thermal noise in MOSFETs as a result of the aggressive reduction of the channel length into the sub-100 nm regimes. It also shows the noise performance of devices in 65 nm CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; thermal noise; CMOS technology; MOSFET; aggressive reduction; channel length; channel thermal noise; size 65 nm; Analog integrated circuits; Application specific integrated circuits; CMOS technology; Equations; High speed integrated circuits; Integrated circuit noise; MOSFETs; Microelectronics; Noise measurement; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734584
Filename :
4734584
Link To Document :
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