Title :
Novel Technique Developed to Design and Simulate RF Amplifier Using GaAs MESFET in ADS Tool
Author :
Sharma, Parmanand ; Prakashdwivedi, Ravi
Author_Institution :
GLA Univ., Mathura, India
Abstract :
This paper concern with the design and simulation of RF amplifier using MESFET [TIM 8596_4UL] at 8.1 GHz to 10 GHz within x-band frequency range. RF amplifier designs rely on the terminal characteristics of the transistor as represented by S-parameter. S-parameter of transistor provides the necessary values to perform the analysis such as stability, DC-biasing and available gain. Based on the Sparameter of the transistor and certain performance requirements a systematic approach for the designing of RF power amplifier is developed using ADS[Advanced Design System]. RF amplifier circuit designed and simulated in ADS which has better stability but low magnitude of S21. By optimizing the DC-biasing circuit and using proper values of passive components, dielectric constant we achieved better performance.
Keywords :
S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; microwave power amplifiers; permittivity; ADS tool; DC-biasing circuit; GaAs; GaAs MESFET; MESFET [TIM 8596_4UL]; RF amplifier circuit; RF power amplifier; S-parameter; X-band frequency range; advanced design system; dielectric constant; frequency 8.1 GHz to 10 GHz; passive components; Circuit stability; Gain; MESFETs; Power amplifiers; Radio frequency; Scattering parameters; Stability analysis; Gain; Gap CapacitorStability; Radio Frequency; S-parameter; etc; x-band;
Conference_Titel :
Computational Intelligence and Communication Networks (CICN), 2013 5th International Conference on
Conference_Location :
Mathura
DOI :
10.1109/CICN.2013.96
