• DocumentCode
    2144582
  • Title

    Analysis of carbon-based interconnect breakdown

  • Author

    Kitsuki, Hirohiko ; Saito, Tsutomu ; Yamada, Toshishige ; Fabris, Drazen ; Wilhite, Patrick ; Suzuki, Makoto ; Yang, Cary Y.

  • Author_Institution
    Center for Nanostruct., Santa Clara Univ., Santa Clara, CA, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    530
  • Lastpage
    533
  • Abstract
    Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. The effect of heat dissipation via the underlying substrate is studied using different experimental configurations. Scanning electron microscopy (SEM) techniques are utilized to study the structural damage by current stress. While the measured maximum current density in the suspended CNF in air is inversely proportional to nanofiber length and independent of diameter, SiO2-supported CNFs improves their current capacity, which implies effective heat dissipation to the oxide. The correlation between maximum and electrical resistivity confirms the importance of local Joule heating, showing strong coupling between electrical and thermal transport in CNFs.
  • Keywords
    carbon fibres; cooling; current density; electric breakdown; electrical resistivity; integrated circuit interconnections; integrated circuit reliability; nanoelectronics; nanofibres; scanning electron microscopy; silicon compounds; thermal analysis; Joule heating; SEM; SiO2; SiO2-supported CNF; carbon nanofibers; carbon-based interconnect breakdown; current density; current-induced breakdown phenomena; electrical resistivity; electrical transport; heat dissipation effect; nanofiber length; on-chip interconnect applications; scanning electron microscopy; thermal transport; Couplings; Current density; Current measurement; Density measurement; Electric breakdown; Electric resistance; Length measurement; Resistance heating; Scanning electron microscopy; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734591
  • Filename
    4734591