DocumentCode
2144582
Title
Analysis of carbon-based interconnect breakdown
Author
Kitsuki, Hirohiko ; Saito, Tsutomu ; Yamada, Toshishige ; Fabris, Drazen ; Wilhite, Patrick ; Suzuki, Makoto ; Yang, Cary Y.
Author_Institution
Center for Nanostruct., Santa Clara Univ., Santa Clara, CA, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
530
Lastpage
533
Abstract
Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. The effect of heat dissipation via the underlying substrate is studied using different experimental configurations. Scanning electron microscopy (SEM) techniques are utilized to study the structural damage by current stress. While the measured maximum current density in the suspended CNF in air is inversely proportional to nanofiber length and independent of diameter, SiO2-supported CNFs improves their current capacity, which implies effective heat dissipation to the oxide. The correlation between maximum and electrical resistivity confirms the importance of local Joule heating, showing strong coupling between electrical and thermal transport in CNFs.
Keywords
carbon fibres; cooling; current density; electric breakdown; electrical resistivity; integrated circuit interconnections; integrated circuit reliability; nanoelectronics; nanofibres; scanning electron microscopy; silicon compounds; thermal analysis; Joule heating; SEM; SiO2; SiO2-supported CNF; carbon nanofibers; carbon-based interconnect breakdown; current density; current-induced breakdown phenomena; electrical resistivity; electrical transport; heat dissipation effect; nanofiber length; on-chip interconnect applications; scanning electron microscopy; thermal transport; Couplings; Current density; Current measurement; Density measurement; Electric breakdown; Electric resistance; Length measurement; Resistance heating; Scanning electron microscopy; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734591
Filename
4734591
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