Research of GaAs target erosion factor under influence of pulsed power ion beam

In the article the results of research on the coefficient of target erosion made of GaAs at the influence of high-power pulsed ion beam are presented. In the experiments the source of high-power ion beams was used. The beam parameters are the following: ion energy is 250 keV, current density at the target is up to 250 A/cm², pulse duration is 80 ns. The coefficient of target erosion and its dependence on the number of subsequent pulses were changed. The increase of surface roughness (R_z) parameter at the increase of number of subsequent current beam pulses and the formation of regular structure of surface relief at the pulse number of 20-40 were noticed.