Title :
The design, fabrication and characterization of GaAs-based RTT with groove and self-aligned Schottky gate structure
Author :
Guo, Wei-Lian ; Niu, Ping-Juan ; Li, Xiao-yun ; Miao, Chang-Yun ; Wang, Wei ; Yu, Xin ; Shang, Yao-Hui ; Feng, Zhen ; Tian, Guo-Ping ; Li, Ya-Li ; Liu, Yong-Qiang ; Yuan, Ming-Wen ; Li, Xiao-Bai
Author_Institution :
Sch. of Inf. & Commun., Tainjin Polytech. Univ., Tainjin, China
Abstract :
In this paper, the design of material structure and device structure , fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (RTT) with groove and self-aligned gate structure have been described completely and systematically .The experimental results measured from our fabricated RTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46, the transconductance gm is in a range of 1.3~8.0 ms, the cutoff frequency fTgm and speed index S are 1.59 GHz and 13.5 ps/V respectively .
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electrical conductivity; gallium arsenide; resonant tunnelling; resonant tunnelling transistors; GaAs; cut-off frequency; device structure design; fabrication processing; frequency 1.59 GHz; gate controlled structure; groove gate structure; material structure design; peak-to-valley current ratio; quantum tunneling effect; resonant tunneling transistor; self-aligned Schottky gate structure; transconductance; Current measurement; Cutoff frequency; Electrodes; Fabrication; Gallium arsenide; Resonant tunneling devices; Satellite broadcasting; Shape; Transconductance; Voltage; GaAs based quantum tunneling effect; Resonant Tunneling Transistor (RTT); gate controlled structure; sckottky gate;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734594
