DocumentCode :
2144754
Title :
Comparison of spintronics and nanoelectronics for information processing
Author :
Wang, Kang L. ; Ovchinnikov, Igor V. ; Khitun, Alex ; Bao, Ming
Author_Institution :
Device Res. Lab. (DRL), Univ. of California, Los Angeles, CA, USA
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
544
Lastpage :
548
Abstract :
To date, electronics uses electron charge as a state variable which is often represented as voltage or current. In this representation of state variable in today¿s electronics, carriers in electronics devices work independently even to a few and single electron cases. As the scaling continues to reduce the feature size, power dissipation and variability become two major challenges among others as identified in ITRS. This paper presents the exposition that spintronics as a collective effect may be favorably used as state variables in the near future information processing beyond conventional electronics for room temperature. An example is presented to compare electronics and spintronics in terms of variability, quantum and thermal fluctuations. This example shows the benefit of scaling to smaller sizes in the case of spintronics (nanomagnetics), which will have a much reduced variability problem as compared with today¿s electronics. Finally, spin wave bus is used to illustrate the potential use as a state variable for logic application. Prototype logic devices using the spin wave bus concept have been demonstrated. The requirements and benchmarks for choosing a state variable are also discussed in terms of its interaction strength for the energy efficiency.
Keywords :
CMOS integrated circuits; fluctuations; logic devices; magnetoelectronics; nanoelectronics; CMOS technology; information processing; nanoelectronics; prototype logic devices; quantum fluctuations; spin wave bus; spintronics; thermal fluctuations; variability; Electrons; Fluctuations; Information processing; Logic devices; Magnetoelectronics; Nanoelectronics; Power dissipation; Prototypes; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734599
Filename :
4734599
Link To Document :
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