DocumentCode :
2144914
Title :
Nano silicide formation in nano Si wires
Author :
Tu, K.N. ; Lu, Kuo-Chang ; Chou, Yi-Chia
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
579
Lastpage :
581
Abstract :
The review reports that the conductance of nanowire of Si is very sensitive to small changes in its surrounding potential and can be affected by the attachment of a small number of charged biological molecules. Using different receptors on the oxidized nano Si wire surface, the detection of the conductance change can be specific to the molecules absorbed on the wire surface. The combination of sensitivity and selectivity makes nanowire-based electronic device to be unique in having a great potential in bio-sensing. It is further reported that in order to have ultra-sensitivity for the detection of a single charged molecule or a virus, the length of the nanowire of Si has to be in the nm range or it requires a nanogapofSi.
Keywords :
electric admittance; nanowires; silicon; biological molecules; nanosilicide formation; nanowires; selectivity; sensitivity; Atomic layer deposition; Contacts; Electrodes; Nanobioscience; Nanoscale devices; Semiconductor thin films; Silicides; Sputtering; Thin film devices; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734604
Filename :
4734604
Link To Document :
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