Theoretical investigation into I–V characteristics of the benzene-molecular system

Author

Na, Li ; Min, Cai

Author_Institution

Sch. of Electron. & Inf. Eng., South China Univ. of Tech., Guangzhou, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

600

Lastpage

603

Abstract

Experiments and theory have so far demonstrated that single molecules can form the core of a two-terminal device.Here this paper simulates the I-V characteristics of the benzene-molecular system on the basis of the tight-binding method.The results exhibit negative differential resistance and an on-off peak-to-valley ratio in excess of 1400:1 when the temperature is 100 k . And discusses the influence of temperature on the current.The result sheds new light on the I-V properties of molecular devices and shows that such calculations would be useful in designing devices for future nanotechnology.

Keywords

molecular electronics; organic compounds; tight-binding calculations; I-V characteristics; I-V properties; benzene-molecular system; negative differential resistance; on-off peak-to-valley ratio; tight-binding method; Chemicals; Electric variables measurement; Extraterrestrial measurements; Nanoscale devices; Nanotechnology; Orbital calculations; Probability; Prototypes; Temperature; Voltage; I–V characteristics; Tight-Binding; benzene-molecular;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734610

Filename

4734610