Title :
Degradation of metal induced laterally crystallized n-type polysilicon TFTs under dynamic gate voltage stresses
Author :
Wang, Huaisheng ; Wang, Mingxiang ; Wong, Man
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Abstract :
Degradation behaviors of metal induced laterally crystallized n-type polysilicon TFTs under dynamic gate voltage stresses have been investigated. Device degradation occurs when the base voltage of gate pulses is lower than the flat-band voltage, and more degradation occurs with steeper falling edge and larger amplitude of the gate pulses. Device degradation is attributed to the hot carrier mechanism related to the transient voltage transition at the falling edge of the gate stress pulses.
Keywords :
elemental semiconductors; hot carriers; semiconductor device testing; silicon; thin film transistors; transients; Si; device degradation; dynamic gate voltage stresses; flat-band voltage; gate stress pulses; hot carrier mechanism; metal induced laterally crystallized n-type polysilicon TFTs; transient voltage transition; Active matrix technology; Crystallization; Degradation; Driver circuits; Frequency; Hot carriers; Stress; Temperature; Thin film transistors; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734612
