DocumentCode
2145142
Title
Simulation of the sputtered atom transport in a pulse deposition process
Author
Kuzmichev, A.I. ; Goncharuk, I.M.
Author_Institution
Nat. Tech. Univ. of Ukraine, Kiev Polytech. Inst., Ukraine
fYear
2002
fDate
2002
Firstpage
303
Lastpage
306
Abstract
The results of Monte Carlo simulation of sputtered atom transport in systems with one and two magnetrons operating in pulse regime are presented. The gas pressure and the gap between target and substrate strongly influence on forward and back depositing atom fluxes, their time behavior and energy. The atom fluxes have a weak ripple at higher gas pressures, larger targets-substrate gap and smaller pauses between current pulses.
Keywords
Monte Carlo methods; magnetrons; pressure; sputter deposition; substrates; Monte Carlo simulation; back depositing atom fluxes; energy; forward depositing atom fluxes; gas pressure; magnetrons; pulse regime partition; sputtered atom transport; target-substrate gap; time behavior; weak ripple; Argon; Atomic layer deposition; Chemical technology; Geometry; Magnetrons; Plasma density; Plasma temperature; Power supplies; Pulsed power supplies; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Discharges and Electrical Insulation in Vacuum, 2002. 20th International Symposium on
Print_ISBN
0-7803-7394-4
Type
conf
DOI
10.1109/ISDEIV.2002.1027369
Filename
1027369
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