Title :
Simulation of the sputtered atom transport in a pulse deposition process
Author :
Kuzmichev, A.I. ; Goncharuk, I.M.
Author_Institution :
Nat. Tech. Univ. of Ukraine, Kiev Polytech. Inst., Ukraine
Abstract :
The results of Monte Carlo simulation of sputtered atom transport in systems with one and two magnetrons operating in pulse regime are presented. The gas pressure and the gap between target and substrate strongly influence on forward and back depositing atom fluxes, their time behavior and energy. The atom fluxes have a weak ripple at higher gas pressures, larger targets-substrate gap and smaller pauses between current pulses.
Keywords :
Monte Carlo methods; magnetrons; pressure; sputter deposition; substrates; Monte Carlo simulation; back depositing atom fluxes; energy; forward depositing atom fluxes; gas pressure; magnetrons; pulse regime partition; sputtered atom transport; target-substrate gap; time behavior; weak ripple; Argon; Atomic layer deposition; Chemical technology; Geometry; Magnetrons; Plasma density; Plasma temperature; Power supplies; Pulsed power supplies; Sputtering;
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 2002. 20th International Symposium on
Print_ISBN :
0-7803-7394-4
DOI :
10.1109/ISDEIV.2002.1027369
