DocumentCode
2145174
Title
Polysilicon thin film transistor for analogue circuit applications
Author
Lewis, A.G. ; Huang, T.Y. ; Bruce, R.H. ; Koyanagi, M. ; Chiang, A. ; Wu, I.W.
Author_Institution
Xerox Palo Alto Res. Center, CA, USA
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
264
Lastpage
267
Abstract
The authors examine the suitability and use of polysilicon thin-film transistors (TFTs) for analog circuit applications. It is shown that the electrical characteristics of TFTs present significant problems for analog design and are likely to make new design techniques necessary. Nevertheless, an operational amplifier built with TFTs is demonstrated, the performance of which is adequate for many basic signal processing functions. A CMOS polysilicon TFT technology was chosen for this study.<>
Keywords
CMOS integrated circuits; elemental semiconductors; linear integrated circuits; operational amplifiers; silicon; thin film transistors; CMOS; TFTs; analogue circuit applications; electrical characteristics; operational amplifier; poly-Si; polycrystalline Si; thin film transistor; CMOS technology; Circuits; Electric variables; Laboratories; Operational amplifiers; Silicon; Substrates; Thin film transistors; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32807
Filename
32807
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