DocumentCode
2145417
Title
Yield improvement of 3D ICs in the presence of defects in through signal vias
Author
Nain, Rajeev K. ; Pinge, Shantesh ; Chrzanowska-Jeske, Malgorzata
Author_Institution
Dept. of Electr. & Comput. Eng., Portland State Univ., Portland, OR, USA
fYear
2010
fDate
22-24 March 2010
Firstpage
598
Lastpage
605
Abstract
Through signal vias (TSVs) in 3D ICs suffer from thermo-mechanical stress, and may fail or attain plasticity resulting in significant yield loss. We present a novel set of strategies for yield improvement in the presence of defects in through signal vias in heterogeneous 3D system-on-chip. Monte-Carlo simulation results show that our strategy can improve the yield of 3D ICs significantly. Furthermore, we estimate the parametric yield and present a quantitative analysis of the impact of our approach on chip area, power, performance and chip revenue that can improve profitability. Our results suggest that the proposed strategies can be very useful in yield-aware 3D design.
Keywords
Monte Carlo methods; failure analysis; integrated circuit yield; system-on-chip; three-dimensional integrated circuits; 3D IC; Monte-Carlo simulation; chip area; circuit defect; heterogeneous 3D system-on-chip; parametric yield; plasticity; profitability; thermo-mechanical stress; through signal vias; yield improvement; yield loss; Costs; Integrated circuit interconnections; Memory architecture; Stacking; System-on-a-chip; Thermal stresses; Thermomechanical processes; Through-silicon vias; Throughput; Yield estimation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2010 11th International Symposium on
Conference_Location
San Jose, CA
ISSN
1948-3287
Print_ISBN
978-1-4244-6454-8
Type
conf
DOI
10.1109/ISQED.2010.5450513
Filename
5450513
Link To Document