• DocumentCode
    2145493
  • Title

    Ferroelectric properties of BiFexCr1-xO3 thin film formed on Pt electrodes

  • Author

    Zhong, Zhiyong ; Sugiyama, Yoshihiro ; Ishiwara, Hiroshi

  • Author_Institution
    Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    699
  • Lastpage
    702
  • Abstract
    BiFexCr1-xO3 (x=0.4~0.6) thin films were formed on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition. The spin-coated, dried and calcined films were finally annealed in a mixed gas of N2 and O2 (N2:O2=4:1) at 450, 500, 550 and 600°C. X-ray diffraction analysis revealed that polycrystalline grains of BiFeO3 and BiCrO3 coexist in the films, and that double perovskite Bi2FeCrO6 crystallites might also be included. The leakage current density measured at room temperature was lower than 1×10-5 A/cm2 in the films annealed at 450°C. The remanent polarization increased with increase of the Fe ratio, and a large value of 45 ¿C/cm2 was obtained in the BiFe0.6Cr0.4O3 thin film, when it was measured at 1.9 MV/cm and 50 kHz. Fatigue property was also improved and no degradation of the remanent polarization was observed in the BiFe0.4Cr0.6O3 film by switching cycles up to 1 × 108.
  • Keywords
    X-ray diffraction; bismuth compounds; crystallites; dielectric polarisation; fatigue; ferroelectric switching; ferroelectric thin films; iron compounds; leakage currents; BiFeCrO; X-ray diffraction analysis; calcined films; chemical solution deposition; crystallites; fatigue property; ferroelectric properties; leakage current density; polycrystalline grains; remanent polarization; switching cycles; temperature 450 degC; temperature 500 degC; temperature 550 degC; temperature 600 degC; thin film; Annealing; Chemicals; Chromium; Ferroelectric materials; Polarization; Semiconductor thin films; Sputtering; Substrates; Temperature measurement; X-ray diffraction; BiCrO3; BiFeO3; FeRAM; fatigue; ferroelectric; remanent polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734627
  • Filename
    4734627