UHV STM AND LEED studies of the nucleation and growth of Ge thin films on Si(113) substrates

Based on UHV STM and LEED observations we have investigated clean surface of Si(113), Ge/Si(113) interface and the reconstruction and morphology of the formation of Ge thin films and nanostructures on Si(113). We clarified that clean surface of Si(113) has 3×2 reconstruction and Ge/Si(113) interface -3×2 and 3×1 reconstructions. Analyzing the morphology of the formation of Ge films on Si(113) clearly show that it is possible to obtain considerable smooth and homogeneous Ge films on Si(113) at 430°C substrate temperature after 30 minutes¿ Ge deposition. The use of Bi surfactant allow to obtain more smooth and homogeneous Ge thin films and nanostructures on Si(113).