Title :
UHV STM AND LEED studies of the nucleation and growth of Ge thin films on Si(113) substrates
Author :
Shmavonyan, G. Sh ; Zendehbad, S.M.
Author_Institution :
State Eng. Univ. of Armenia, Yerevan, Armenia
Abstract :
Based on UHV STM and LEED observations we have investigated clean surface of Si(113), Ge/Si(113) interface and the reconstruction and morphology of the formation of Ge thin films and nanostructures on Si(113). We clarified that clean surface of Si(113) has 3×2 reconstruction and Ge/Si(113) interface -3×2 and 3×1 reconstructions. Analyzing the morphology of the formation of Ge films on Si(113) clearly show that it is possible to obtain considerable smooth and homogeneous Ge films on Si(113) at 430°C substrate temperature after 30 minutes¿ Ge deposition. The use of Bi surfactant allow to obtain more smooth and homogeneous Ge thin films and nanostructures on Si(113).
Keywords :
elemental semiconductors; germanium; nanotechnology; nucleation; scanning tunnelling microscopy; semiconductor epitaxial layers; silicon; Ge; Si; UHV STM; clean surface interface; nanostructures; nucleation; thin film growth; Atomic layer deposition; Epitaxial growth; Nanostructures; Semiconductor thin films; Substrates; Surface cleaning; Surface morphology; Surface reconstruction; Temperature; Transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734629
