Title :
Low resistance Ti/Al/Ni/Au Ohmic contact to (NH4)2Sx treated n-type GaN for high temperature applications
Author :
Lin, F. ; Shen, B. ; Huang, S. ; Xu, F.J. ; Yang, H.Y. ; Chen, W.H. ; Ma, N. ; Qin, Z.X. ; Zhang, G.Y.
Author_Institution :
State Key Lab. of Artificial Microstructure & Mesoscopic Phys., Peking Univ., Beijing, China
Abstract :
Low resistance Ti/Al/Ni/Au Ohmic contact to (NH4)2Sx treated n-type GaN has been studied in the temperature range from 25°C to 600°C It is found that the specific contact resistivity ¿c of the sample treated with (NH4)2Sx solution for 5 min at 90°C decreases with increasing measuring temperature, while the ¿c of the sample treated with (NH4)2Sx solution for 25 min at 90°C increases with increasing measuring temperature. Excellent agreement with the ¿5 min-treated¿ sample can be obtained by the field emission model with an average Schottky barrier height (SBH) ¿B=1.05 eV. Meanwhile, a field emission model with a temperature-dependent effective SBH is suggested to be responsible for the ¿25 min-treated¿ sample in which metal/semiconductor (MS) interface potential pinch-off may occur.
Keywords :
III-V semiconductors; Schottky barriers; aluminium; electrical resistivity; field emission; gallium compounds; gold; nickel; ohmic contacts; semiconductor epitaxial layers; semiconductor-metal boundaries; titanium; wide band gap semiconductors; Schottky barrier height; Ti-Al-Ni-Au-GaN; field emission model; high temperature applications; low resistance Ohmic contact; metal-semiconductor interface potential; n-type semiconductor epilayer; specific contact resistivity; temperature 25 degC to 600 degC; time 25 min; time 5 min; transmission line method; Annealing; Artificial intelligence; Conductivity; Contact resistance; Gallium nitride; Gold; Ohmic contacts; Physics; Temperature distribution; Temperature measurement;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734634
