Synthesis of indium phosphide polycrystalline

Author

Sun, Niefeng ; Mao, Luhong ; Sankaranarayanan, K. ; Zhou, Xiaolong ; Guo, Weilian ; Wu, Xiawan ; Sun, Tongnian

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

734

Lastpage

737

Abstract

A large quantity of high purity InP crystal material has been produced by the phosphorus in-situ injection synthesis. In the injection method, phosphorus reacts with indium very quickly so that the rapid polycrystalline synthesis is possible. The injection speed, melt temperature, phosphorus excess, and so on are also important for a successful synthesis process. About 3200-4800 g stoichiometric high purity poly InP is synthesized reproducibly by improved P-injection method in the high-pressure puller. Twin-Free InP single crystals with diameter of 50-110 mm can be pulled after the synthesis. In the present work, the characterization of InP polycrystalline was studied by van der Pauw method, GDMS, and PL.

Keywords

III-V semiconductors; crystal growth from melt; indium compounds; materials preparation; photoluminescence; semiconductor growth; stoichiometry; GDMS; InP; crystal growth; high-pressure puller; indium phosphide polycrystalline; injection method; liquid encapsulated Czochralski method; melt temperature; phosphorus in-situ injection synthesis; photoluminescence; size 50 mm to 110 mm; stoichiometry; twin-free single crystals; van der Pauw method; Cooling; Crystalline materials; Crystals; Impurities; Indium phosphide; Land surface temperature; Semiconductor materials; Sun; Synthesizers; Temperature control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734636

Filename

4734636