Title :
Synthesis of indium phosphide polycrystalline
Author :
Sun, Niefeng ; Mao, Luhong ; Sankaranarayanan, K. ; Zhou, Xiaolong ; Guo, Weilian ; Wu, Xiawan ; Sun, Tongnian
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
A large quantity of high purity InP crystal material has been produced by the phosphorus in-situ injection synthesis. In the injection method, phosphorus reacts with indium very quickly so that the rapid polycrystalline synthesis is possible. The injection speed, melt temperature, phosphorus excess, and so on are also important for a successful synthesis process. About 3200-4800 g stoichiometric high purity poly InP is synthesized reproducibly by improved P-injection method in the high-pressure puller. Twin-Free InP single crystals with diameter of 50-110 mm can be pulled after the synthesis. In the present work, the characterization of InP polycrystalline was studied by van der Pauw method, GDMS, and PL.
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; materials preparation; photoluminescence; semiconductor growth; stoichiometry; GDMS; InP; crystal growth; high-pressure puller; indium phosphide polycrystalline; injection method; liquid encapsulated Czochralski method; melt temperature; phosphorus in-situ injection synthesis; photoluminescence; size 50 mm to 110 mm; stoichiometry; twin-free single crystals; van der Pauw method; Cooling; Crystalline materials; Crystals; Impurities; Indium phosphide; Land surface temperature; Semiconductor materials; Sun; Synthesizers; Temperature control;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734636
