Title :
Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application
Author :
Miyao, Masanobu ; Ando, Yuichiro ; Ueda, Koji ; Hamaya, Kohei ; Nozaki, Yukio ; Sadoh, Taizoh ; Matsuyama, Kimihide ; Narumi, Kazumasa ; Maeda, Yoshihito
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka, Japan
Abstract :
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:1) and growth temperature (130°C), a high quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 104. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and Fe3Si source/drain for spin-injection.
Keywords :
Schottky barriers; Schottky diodes; coercive force; elemental semiconductors; germanium; iron compounds; magnetic epitaxial layers; magnetic semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; Fe3Si-Ge; Schottky barrier height; Schottky diode; coercivity; group-IV-semiconductor; hybrid structures; low temperature molecular beam epitaxy; magnetic silicide; mobility; on-current-off-current ratio; spin-injection; spin-transistor; temperature 130 degC; Atomic beams; Atomic layer deposition; Coercive force; Iron; Magnetic flux; Magnetic properties; Molecular beam epitaxial growth; Schottky barriers; Silicides; Temperature;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734647
