Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures

Author

Zhao, M. ; Ni, W.X. ; Townsend, P. ; Lynch, S.A. ; Paul, D.J. ; Hsu, C.C. ; Chang, M.N.

Author_Institution

Dept. of Phys., Linkoping Univ., Sweden

fYear

2005

fDate

21-23 Sept. 2005

Firstpage

10

Lastpage

12

Abstract

This study presents the growth of strain-symmetric Si/SiGe THz quantum cascade structures on virtual substrates with precise layer parameters, thick active region, and high material quality. Sample characterization is done using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy.

Keywords

Ge-Si alloys; X-ray diffraction; atomic force microscopy; elemental semiconductors; molecular beam epitaxial growth; optical materials; quantum cascade lasers; semiconductor growth; semiconductor quantum wells; silicon; transmission electron microscopy; Si-Ge characterization; Si-SiGe; Si-SiGe growth; SiGe; THz quantum cascade structures; atomic force microscopy; high material quality; high resolution X-ray diffraction; precise layer parameters; quantum cascade lasers; strain-symmetried quantum cascade structures; thick active region; transmission electron microscopy; virtual substrates; Capacitive sensors; Germanium silicon alloys; Lattices; Molecular beam epitaxial growth; Optical buffering; Optical feedback; Optical superlattices; Quantum cascade lasers; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2005. 2nd IEEE International Conference on

Print_ISBN

0-7803-9070-9

Type

conf

DOI

10.1109/GROUP4.2005.1516385

Filename

1516385